Los estudiantes de doctorado crean la red de investigadores discapacitados

Un grupo de alumnos de doctorado de la Universidad de Granada (UGR), correspondientes al tercer ciclo universitario, ha creado la Red Española de Investigadores y Doctores con Discapacidad (Reiddis) con el objetivo de promover el encuentro de investigadores, personal investigador en formación, técnicos de investigación, doctorados y doctores con diferentes discapacidades.

Su objetivo es que todos ellos puedan poner en común estudios, inquietudes y reivindicaciones comunes, así como detectar investigaciones que puedan aumentar la inclusión de las personas con discapacidad, la calidad de vida y garantizar la igualdad real de oportunidades. Además, pretenden fomentar la búsqueda de alternativas de financiación por los recortes en los nuevos presupuestos del Estado que afectan a la investigación universitaria española. Antonio Tejada, promotor de la red, destaca que ésta «pretende ser un espacio plural, multidisciplinario y abierto, donde se crucen investigaciones de diferentes campos pudiendo dar lugar a nuevos campos e investigaciones.

Descargar


A hot nose the sign of a liar?

Contrary to what you may say to your children, telling a lie doesn’t, of course, make your nose grow like Pinocchio’s. But it does make it hotter.

Scientists claim that a rise in anxiety produced by lying will increase the temperature of the tip of your nose.

And if you’re worried that your fib will be uncovered, they also suggest a way of cooling the nose down – making ‘ a great mental effort’.

The scientists, from the University of Granada, discovered the phenomenon by using thermal imaging cameras to monitor volunteers.

They have called it ‘The Pinocchio Effect’, in honour of the 19th century Italian tale of the wooden puppet whose nose grew when he failed to tell the truth. In their doctoral thesis, Emilio Gómez Milán and Elvira Salazar López suggest that the temperature of the nose increases or decreases according to mood, as does the orbital muscle area in the inner corner of the eyes.

The scientists also claim thermal imaging can detect sexual desire and arousal in men and women, indicated by an increase in temperature in the chest and genital areas.

And the technique also allowed the pair to produce thermal footprints – body patterns with specific temperature changes – for aerobic exercise and distinct types of dance, such as ballet.

They explained: ‘When someone dances flamenco, the temperature in their buttocks lowers and it rises in their forearms.

‘This is the thermal footprint for flamenco, although each type of dance has its own.’

The pair reached their conclusions after discovering that when the volunteers lied about their feelings, the brain’s insular cortex was altered.

They said: ‘The insular cortex is involved in the detection and regulation of body temperature, so there is a large negative correlation between the activity of this structure and the magnitude of the temperature change.

‘The more activity in the insular cortex (the higher the visceral feeling), lower heat exchange occurs, and vice versa.’

Descargar


A hot nose the sign of a liar?

Contrary to what you may say to your children, telling a lie doesn’t, of course, make your nose grow like Pinocchio’s. But it does make it hotter.

Scientists claim that a rise in anxiety produced by lying will increase the temperature of the tip of your nose.

And if you’re worried that your fib will be uncovered, they also suggest a way of cooling the nose down – making ‘ a great mental effort’.

The scientists, from the University of Granada, discovered the phenomenon by using thermal imaging cameras to monitor volunteers.

They have called it ‘The Pinocchio Effect’, in honour of the 19th century Italian tale of the wooden puppet whose nose grew when he failed to tell the truth. In their doctoral thesis, Emilio Gómez Milán and Elvira Salazar López suggest that the temperature of the nose increases or decreases according to mood, as does the orbital muscle area in the inner corner of the eyes.

The scientists also claim thermal imaging can detect sexual desire and arousal in men and women, indicated by an increase in temperature in the chest and genital areas.

And the technique also allowed the pair to produce thermal footprints – body patterns with specific temperature changes – for aerobic exercise and distinct types of dance, such as ballet.

They explained: ‘When someone dances flamenco, the temperature in their buttocks lowers and it rises in their forearms.

‘This is the thermal footprint for flamenco, although each type of dance has its own.’

The pair reached their conclusions after discovering that when the volunteers lied about their feelings, the brain’s insular cortex was altered.

They said: ‘The insular cortex is involved in the detection and regulation of body temperature, so there is a large negative correlation between the activity of this structure and the magnitude of the temperature change.

‘The more activity in the insular cortex (the higher the visceral feeling), lower heat exchange occurs, and vice versa.’

Descargar


Spanish scientists design a revolutionary data storage device

University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers have designed one of the most advanced data storage devices in the world. The invention is protected with ten international patents including Japan, USA, Corea and the European Union. Important companies such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device.

The researchers at the University of Granada Nanoelectronics Lab Noel Rodríguez and Francisco Gámiz have designed an Advanced Random Access Memory (A-RAM). The researchers developed the theoretical model of this new technology in 2009. The CEA-LETI lab –which has developed one of the most advanced nanoelectronic technologies in the world– have designed a device that experimentally confirms the results previously obtained in theoretical studies.

The results of this experimental validation have been published in the prestigious journal IEEE Electron Device Letters and were presented in the International Silicon on Insulator Technology Conference recently celebrated in San Francisco, USA.

In the wake of the new devices and microprocessors developed by Intel (Ivy Bridge), UGR scientists are investigating alternative 3D A2RAM-based memories such as FinFET-ARAM and Trigate-ARAM patented in France and presented in the International Memory Workshop celebrated in May 2012 in Milan, Italy.

This shows the University of Granada researchers Noel Rodriguez (left) and Francisco Gamiz (right), with a CEA-LETI-based memory composed of A2RAM memory cells.

Overcoming Challenges

University of Granada researchers have demonstrated that the memory cell A-RAM and its variant A2RAM can solve the miniaturization challenges in DRAM cells –which is the type of memory that most digital devices such as computers, smartphones, tablets, etc. incorporate- long retention times, low battery consumption, and a large separation between the logic levels, which makes it immune to noise/interferences and to the variability of technological processes.

According to Francisco Gámiz «since its invention in the 60’s by Robert Dennard at IBM (USA), the commands and data necessary for the proper performance of a computer are stored as zeros (no charge) and ones (charge) in DRAM (Dynamic Random Access Memory) cell arrays». These cell arrays are composed of a transistor and a capacitor (ó 1T-1C-DRAM). Each bit of information is stored as an electric charge in a cell consisting on a transistor and a capacitor that provides access to the charge and, consequently, to the data.

Since its development, the DRAM concept has remained unchanged. Currently, we can find DRAM cells smaller than 20nm (1 nanometer is one billionth of a meter) and DRAM memory chips of several gigabytes (one gigabyte is one billion of bites). However, the possibilities of making these cells smaller are becoming exhausted due to the minimum charge needed to clearly distinguish between the two estates of a bit (1 and 0). This is drawing the line to the minimum size of capacitors. «If we cannot further reduce the size of the capacitor, the solution is to replace it with 1T-DRAM memory cells -or one-transistor memories- that store information directly in the transistor, which simultaneously detects the estate of the cells and gives access to the information stored.»

Descargar


Spanish scientists design a revolutionary data storage device

University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers have designed one of the most advanced data storage devices in the world. The invention is protected with ten international patents including Japan, USA, Corea and the European Union. Important companies such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device.

The researchers at the University of Granada Nanoelectronics Lab Noel Rodríguez and Francisco Gámiz have designed an Advanced Random Access Memory (A-RAM). The researchers developed the theoretical model of this new technology in 2009. The CEA-LETI lab –which has developed one of the most advanced nanoelectronic technologies in the world– have designed a device that experimentally confirms the results previously obtained in theoretical studies.

The results of this experimental validation have been published in the prestigious journal IEEE Electron Device Letters and were presented in the International Silicon on Insulator Technology Conference recently celebrated in San Francisco, USA.

In the wake of the new devices and microprocessors developed by Intel (Ivy Bridge), UGR scientists are investigating alternative 3D A2RAM-based memories such as FinFET-ARAM and Trigate-ARAM patented in France and presented in the International Memory Workshop celebrated in May 2012 in Milan, Italy.

This shows the University of Granada researchers Noel Rodriguez (left) and Francisco Gamiz (right), with a CEA-LETI-based memory composed of A2RAM memory cells.

Overcoming Challenges

University of Granada researchers have demonstrated that the memory cell A-RAM and its variant A2RAM can solve the miniaturization challenges in DRAM cells –which is the type of memory that most digital devices such as computers, smartphones, tablets, etc. incorporate- long retention times, low battery consumption, and a large separation between the logic levels, which makes it immune to noise/interferences and to the variability of technological processes.

According to Francisco Gámiz «since its invention in the 60’s by Robert Dennard at IBM (USA), the commands and data necessary for the proper performance of a computer are stored as zeros (no charge) and ones (charge) in DRAM (Dynamic Random Access Memory) cell arrays». These cell arrays are composed of a transistor and a capacitor (ó 1T-1C-DRAM). Each bit of information is stored as an electric charge in a cell consisting on a transistor and a capacitor that provides access to the charge and, consequently, to the data.

Since its development, the DRAM concept has remained unchanged. Currently, we can find DRAM cells smaller than 20nm (1 nanometer is one billionth of a meter) and DRAM memory chips of several gigabytes (one gigabyte is one billion of bites). However, the possibilities of making these cells smaller are becoming exhausted due to the minimum charge needed to clearly distinguish between the two estates of a bit (1 and 0). This is drawing the line to the minimum size of capacitors. «If we cannot further reduce the size of the capacitor, the solution is to replace it with 1T-DRAM memory cells -or one-transistor memories- that store information directly in the transistor, which simultaneously detects the estate of the cells and gives access to the information stored.»

Descargar


Spanish scientists design a revolutionary data storage device

This shows the University of Granada researchers Noel Rodriguez (left) and Francisco Gamiz (right), with a CEA-LETI-based memory composed of A2RAM memory cells. Credit: University of Granada University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers have designed one of the most advanced data storage devices in the world. The invention is protected with ten international patents including Japan, USA, Corea and the European Union. Important companies such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device. Ads by Google Máquinas de Nespresso® – Hermosos Diseños y Simples de Usar. Prepárate la Taza de Café Perfecta! – Nespresso.com/EspressoMaquina The researchers at the University of Granada Nanoelectronics Lab Noel Rodríguez and Francisco Gámiz have designed an Advanced Random Access Memory (A-RAM). The researchers developed the theoretical model of this new technology in 2009. The CEA-LETI lab –which has developed one of the most advanced nanoelectronic technologies in the world– have designed a device that experimentally confirms the results previously obtained in theoretical studies. The results of this experimental validation have been published in the prestigious journal IEEE Electron Device Letters and were presented in the International Silicon on Insulator Technology Conference recently celebrated in San Francisco, USA. In the wake of the new devices and microprocessors developed by Intel (Ivy Bridge), UGR scientists are investigating alternative 3D A2RAM-based memories such as FinFET-ARAM and Trigate-ARAM patented in France and presented in the International Memory Workshop celebrated in May 2012 in Milan, Italy. Overcoming Challenges University of Granada researchers have demonstrated that the memory cell A-RAM and its variant A2RAM can solve the miniaturization challenges in DRAM cells –which is the type of memory that most digital devices such as computers, smartphones, tablets, etc. incorporate- long retention times, low battery consumption, and a large separation between the logic levels, which makes it immune to noise/interferences and to the variability of technological processes. According to Francisco Gámiz «since its invention in the 60’s by Robert Dennard at IBM (USA), the commands and data necessary for the proper performance of a computer are stored as zeros (no charge) and ones (charge) in DRAM (Dynamic Random Access Memory) cell arrays». These cell arrays are composed of a transistor and a capacitor (ó 1T-1C-DRAM). Each bit of information is stored as an electric charge in a cell consisting on a transistor and a capacitor that provides access to the charge and, consequently, to the data. Since its development, the DRAM concept has remained unchanged. Currently, we can find DRAM cells smaller than 20nm (1 nanometer is one billionth of a meter) and DRAM memory chips of several gigabytes (one gigabyte is one billion of bites). However, the possibilities of making these cells smaller are becoming exhausted due to the minimum charge needed to clearly distinguish between the two estates of a bit (1 and 0). This is drawing the line to the minimum size of capacitors. «If we cannot further reduce the size of the capacitor, the solution is to replace it with 1T-DRAM memory cells -or one-transistor memories- that store information directly in the transistor, which simultaneously detects the estate of the cells and gives access to the information stored.»
Descargar


Spanish scientists design a revolutionary data storage device

This shows the University of Granada researchers Noel Rodriguez (left) and Francisco Gamiz (right), with a CEA-LETI-based memory composed of A2RAM memory cells. Credit: University of Granada University of Granada researchers have developed a revolutionary data storage device in collaboration with the CEA-LETI lab at Grenoble (France), an institution of the Campus of International Excellence CEI BioTic. The researchers have designed one of the most advanced data storage devices in the world. The invention is protected with ten international patents including Japan, USA, Corea and the European Union. Important companies such as Samsung and Hynix (Corea) and Micron (USA) have shown interest in this innovative data storage device. Ads by Google Máquinas de Nespresso® – Hermosos Diseños y Simples de Usar. Prepárate la Taza de Café Perfecta! – Nespresso.com/EspressoMaquina The researchers at the University of Granada Nanoelectronics Lab Noel Rodríguez and Francisco Gámiz have designed an Advanced Random Access Memory (A-RAM). The researchers developed the theoretical model of this new technology in 2009. The CEA-LETI lab –which has developed one of the most advanced nanoelectronic technologies in the world– have designed a device that experimentally confirms the results previously obtained in theoretical studies. The results of this experimental validation have been published in the prestigious journal IEEE Electron Device Letters and were presented in the International Silicon on Insulator Technology Conference recently celebrated in San Francisco, USA. In the wake of the new devices and microprocessors developed by Intel (Ivy Bridge), UGR scientists are investigating alternative 3D A2RAM-based memories such as FinFET-ARAM and Trigate-ARAM patented in France and presented in the International Memory Workshop celebrated in May 2012 in Milan, Italy. Overcoming Challenges University of Granada researchers have demonstrated that the memory cell A-RAM and its variant A2RAM can solve the miniaturization challenges in DRAM cells –which is the type of memory that most digital devices such as computers, smartphones, tablets, etc. incorporate- long retention times, low battery consumption, and a large separation between the logic levels, which makes it immune to noise/interferences and to the variability of technological processes. According to Francisco Gámiz «since its invention in the 60’s by Robert Dennard at IBM (USA), the commands and data necessary for the proper performance of a computer are stored as zeros (no charge) and ones (charge) in DRAM (Dynamic Random Access Memory) cell arrays». These cell arrays are composed of a transistor and a capacitor (ó 1T-1C-DRAM). Each bit of information is stored as an electric charge in a cell consisting on a transistor and a capacitor that provides access to the charge and, consequently, to the data. Since its development, the DRAM concept has remained unchanged. Currently, we can find DRAM cells smaller than 20nm (1 nanometer is one billionth of a meter) and DRAM memory chips of several gigabytes (one gigabyte is one billion of bites). However, the possibilities of making these cells smaller are becoming exhausted due to the minimum charge needed to clearly distinguish between the two estates of a bit (1 and 0). This is drawing the line to the minimum size of capacitors. «If we cannot further reduce the size of the capacitor, the solution is to replace it with 1T-DRAM memory cells -or one-transistor memories- that store information directly in the transistor, which simultaneously detects the estate of the cells and gives access to the information stored.»
Descargar


El Faro de Melilla

Pág. 22: La UGR publica un libro de José Jaime Peláez sobre Fray Luis de Granada

Descarga por URL: http://sl.ugr.es/02SV

Descargar


El Faro de Melilla

Pág. 22: La UGR publica un libro de José Jaime Peláez sobre Fray Luis de Granada

Descarga por URL: http://sl.ugr.es/02SV

Descargar


«Día Internacional de la Discapacidad», en la Facultad de Psicología

  • Conferencia y mesa redonda organizadas por la Unidad de Atención a Personas con Necesidades Especiales

Con motivo del “Día Internacional de la Discapacidad”, se va llevar a cabo un ciclo de conferencias, el miércoles 28 de noviembre, organizado por la Unidad de Atención a Personas con Necesidades Especiales de la Facultad de Psicología de la Universidad de Granada.

  • 10 h. Conferencia de Prado Silván Ferrero, profesora del Departamento de Psicología Social de la UNED: “Una aproximación psicosocial al estudio de la discapacidad: modelos explicativos y propuestas de intervención”. Esta ponencia se plantea como objetivo primordial tratar de explorar aspectos psicosociales que están relacionados con la actitud hacia las personas con discapacidad. Es decir, adoptaremos el punto de vista de las personas sin discapacidad, para conocer los factores que pueden estar conformando los procesos de aceptación y rechazo de este colectivo. Finalmente se propondrán y analizarán algunas estrategias de intervención que puedan contribuir a mejorar las relaciones entre las personas con y sin discapacidad.
  • 11:00 h: Mesa redonda y debate acerca del estigma social y su efecto sobre las personas estigmatizadas.

Organiza: Unidad de Atención a Personas con Necesidades Especiales de la Facultad de Psicología de la Universidad de Granada.

CONVOCATORIA:

  • ASUNTO: Conferencia y mesa redonda por el “Día Internacional de la Discapacidad”.
  • DÍA: miércoles 28 de noviembre.
  • HORA: 10 h.
  • LUGAR: Aula Magna de la Facultad de Psicología.

«Día Internacional de la Discapacidad», en la Facultad de Psicología

  • Conferencia y mesa redonda organizadas por la Unidad de Atención a Personas con Necesidades Especiales

Con motivo del “Día Internacional de la Discapacidad”, se va llevar a cabo un ciclo de conferencias, el miércoles 28 de noviembre, organizado por la Unidad de Atención a Personas con Necesidades Especiales de la Facultad de Psicología de la Universidad de Granada.

  • 10 h. Conferencia de Prado Silván Ferrero, profesora del Departamento de Psicología Social de la UNED: “Una aproximación psicosocial al estudio de la discapacidad: modelos explicativos y propuestas de intervención”. Esta ponencia se plantea como objetivo primordial tratar de explorar aspectos psicosociales que están relacionados con la actitud hacia las personas con discapacidad. Es decir, adoptaremos el punto de vista de las personas sin discapacidad, para conocer los factores que pueden estar conformando los procesos de aceptación y rechazo de este colectivo. Finalmente se propondrán y analizarán algunas estrategias de intervención que puedan contribuir a mejorar las relaciones entre las personas con y sin discapacidad.
  • 11:00 h: Mesa redonda y debate acerca del estigma social y su efecto sobre las personas estigmatizadas.

Organiza: Unidad de Atención a Personas con Necesidades Especiales de la Facultad de Psicología de la Universidad de Granada.

CONVOCATORIA:

  • ASUNTO: Conferencia y mesa redonda por el “Día Internacional de la Discapacidad”.
  • DÍA: miércoles 28 de noviembre.
  • HORA: 10 h.
  • LUGAR: Aula Magna de la Facultad de Psicología.

«Día Internacional de la Discapacidad», en la Facultad de Psicología

  • Conferencia y mesa redonda organizadas por la Unidad de Atención a Personas con Necesidades Especiales

Con motivo del “Día Internacional de la Discapacidad”, se va llevar a cabo un ciclo de conferencias, el miércoles 28 de noviembre, organizado por la Unidad de Atención a Personas con Necesidades Especiales de la Facultad de Psicología de la Universidad de Granada.

  • 10 h. Conferencia de Prado Silván Ferrero, profesora del Departamento de Psicología Social de la UNED: “Una aproximación psicosocial al estudio de la discapacidad: modelos explicativos y propuestas de intervención”. Esta ponencia se plantea como objetivo primordial tratar de explorar aspectos psicosociales que están relacionados con la actitud hacia las personas con discapacidad. Es decir, adoptaremos el punto de vista de las personas sin discapacidad, para conocer los factores que pueden estar conformando los procesos de aceptación y rechazo de este colectivo. Finalmente se propondrán y analizarán algunas estrategias de intervención que puedan contribuir a mejorar las relaciones entre las personas con y sin discapacidad.
  • 11:00 h: Mesa redonda y debate acerca del estigma social y su efecto sobre las personas estigmatizadas.

Organiza: Unidad de Atención a Personas con Necesidades Especiales de la Facultad de Psicología de la Universidad de Granada.

CONVOCATORIA:

  • ASUNTO: Conferencia y mesa redonda por el “Día Internacional de la Discapacidad”.
  • DÍA: miércoles 28 de noviembre.
  • HORA: 10 h.
  • LUGAR: Aula Magna de la Facultad de Psicología.